hyoushizumen.jpg
Chemical vapor deposition (CVD) total solution. CVD precursors & Organometallics
About us        Business         Products       Contract CVD      R & D       Japanese Site        Contact
Line of Business

   Development of CVD precursor              Disposal advisory of organometallics         CVD consulting
   Production/sales of CVD precursor         CVD process development                        Organometallic vapor pressure measurement
   Novel organometallics                             CVD on contract                                        Organometallic analysis
   Production/sales of organometallics        
Gas-Phase Growth Ltd.
4-26-20 Higashi-cho, Koganei, Tokyo 184-0011 Japan
                                                                     Please Send inquiry to:machida@kisoh-seicho.com
2012 (c) Gas-Phase Growth Ltd. All Rights Reserved.           Unauthorized reproduction of all data and text in this site is strictly prohibited.

Heat-resistant test　[ The upper limit 1100oC ]
New Products    (t-BuN=)2Mo(NMe2)2  /  [Novel Mo] C11H16O3N2Mo
                                              /  (t-BuN=)2W(NMe2)2  /  [Novel Fe] C18H38N4Fe
New Product 7  Ga precursor for GaN thin film [ Low temperature deposition ]
New Product 6  S precursor for MoS2 thin film [ Sulfurization reagent ]
New Product 1 [price down]   t-BuGeH3 for Ge epitaxy   ¥3,200-/g 〜
New Product 5 (Magnesium liquid precursor for GaN)
                        This is a new type dopant which is not cyclopentadiene.
New Product 4  (Te precursor for GeSbTe PCRAM)   [ Tellurization reagent ]
New Product 3  (Nitrogen precursor for GaN R&D)
New Product 2  (SFCD <SCFD> precursor for Cu thin film )

GPG_Lucida1.png