Organometallics, Organometal, Metal organic, MOCVD, CVD, CVD precursor, Precursors, Semiconductor, Thin film, Metal thin films, Electronics, ALD, ALD precursor, Reagents, Dopant, Doping, Products, Produce, Sales, metallocene, Alkoxide,
Metaldiketonate, Diketone, Deuterated compounds, Stable isotope, 有機金属、安定同位体、CVD原料開発、CVD原料製造、CVD原料販売、有機金属試作、有機金属製造販売、有機金属処理、CVDプロセス開発、依託成膜、CVDコンサルティング、有機金属蒸気圧測定、有機金属分析、不斉合成、触媒、
Please contact following e-mail when quotations,
orders, and deposition details are necessary.
E-mail: machida@kisoh-seicho.com
委託成膜 Contract CVD, ALD, Plasme-CVD
Temperature： 200 - 1100℃
Hot wall CVD (A) : Simple horizontal Chamber (For the screening of materials, etc. )
Hot wall CVD (B) : Temperature-gradient Chamber (For the pursuit of a reaction mechanism and Arrhenius plot, etc. )
Atmospheric pressure CVD
Low pressure CVD, ALD
Plasma CVD
Trench and holl coverage test
蒸気圧測定 Vappor pressure measurement
Air sensitive precursor ( Organometallics, Amidinate metal complex, etc.)
Low vappor pressure precursor ( Sublimation solid )
揮発量測定 Volatilization amount measurement
The amount of volatilization per unit time
Temperature dependence on the amount of volatilization
Carrier gas flow rate dependence on the amount of volatilization
Bottle pressure dependence on the amount of volatilization
Bottle form dependenc on the amount of volatilization
Long-term volatilization amount stability ( Puls precursor instability, color and appearance changes )
